1 / 13 n ??? n - channel mosfet js 65 r 360 f u order codes ? marking ? package halogen free ? packaging d evice w eight js65r 360 fu - o - f2 - n - b js65r 360 fu to - 220mf - k2 no tube 2.20 g(typ) ? main characteristics i d 11 a v dss 650 v rdson - typ @vgs=10v 360 m ? qg - typ 2 5 nc ? ? ??? ? ? led ? applications ? high frequency switching mode power supply ? electronic ballast ? led p ower supply ? ? ? ? c rss ( ? 4 .5 pf) ? ?? ? ??? ? rohs ? features ? l ow gate charge ? low c rss (typical 4 .5 pf ) ? fast switching ? 100% avalanche tested ? rohs product ? order message ? package r
js 65 r 360 f u 20 160 8 a 2 / 8 ?? absolute ratings (tc=25 ) * ?? *drain curr ent limited by maximum junction temperature ? parameter s ymbol ? value unit js65r360fu ???? dss 650 v ? d t=25 t=100 ? ? 1 drain current - pulse dm 33 * a ??? gss 30 v ? ? 2 single pulsed avalanche energy as 280 mj ? ? 1 avalanche current ar 5.5 a ?? ? 1 ar 0. 5 mj ??? ? 3 peak diode recovery dv/dt ? d t c =25 - derate above 25 ??? j stg - 55 ?? l 300 r
js 65 r 360 f u 20 160 8 a 3 / 8 e lectrical c haracteristics ? parameter symbol tests conditions min typ max units ? off C characteristics ??? drain - source voltage bv dss i d =250 a, v gs =0v 650 - - v ?? breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0. 65 - v/ ???? zero gate voltage drain current i dss v ds = 650 v,v gs =0v, t c =25 - - 1 0 a v ds = 650 v, t c =125 - - 1 0 0 a ?? gate - body leakage current, forward i g ssf v ds =0v, v gs =30v - - 100 na ?? gate - body leakage current, reverse i gssr v ds =0v, v gs = - 30v - - - 100 na ?? on - characteristics ?? gate threshold voltage v gs(th) v ds = v gs , i d =250 a 2 . 5 3.25 4 v ?? static drain - source on - resistance r ds(on) v gs =10v , i d = 5 .0 a - 3 60 400 m ? forward transconductance g fs v ds = 2 0v, i d = 11 a note 4 - 10 - s ? dynamic characteristics input capacitance c iss v ds = 50 v, v gs =0v, f=1.0mh z - 1035 - pf output capacitance c oss - 89 - pf reverse transfer capacitance c rss - 4 .5 - pf r
js 65 r 360 f u 20 160 8 a 4 / 8 e lectrical c haracteristics switching characteristics ?? turn - on delay time t d (on) v dd = 38 0v,i d = 5.5 a,r g = 6.8 ?, vgs=10v note 4 5 - 9 - ns ? turn - on rise time t r - 4 - ns ?? tu rn - off delay time t d (off) - 41 6 6 ns ?? turn - off fall time t f - 4.6 8 ns ? total gate charge q g v ds = 520 v , i d = 11 a v gs =10v note 4 5 - 25 42 nc ?? gate - source charge q gs - 6.0 - nc ?? gate - drain charge q gd - 8.7 - nc ? intrinsic g ate resistance r g f = 1 mhz open drain - 2. 1 - ? ????? drain - source diode characteristics and maximum ratings maximum continuous drain - source diode forward current i s - - 11 a maximum pulsed drain - source diode forward current i sm - - 33 a ? drain - source diode forward voltage v sd v gs =0v, i s = 11 a - 0.9 1. 2 v ?? reverse recovery time t rr v gs =0v, i s = 11 a di f /dt=100a/ s (note 4) - 2 47 - ns ? reverse recovery charge q rr - 2. 3 - c ? parameter symbol max unit js65r360fu ??? thermal resistance, junction to case rth(j - c) 3.92 /w ? thermal resistance, junction to ambient r th(j - a) 80 /w ? ? 1 ? 2 vgs=1 0v , v dd = 50 v, r g =25 ?, ? t j =25 3 i sd 11 a,di/dt 3 00a/ s,vddbv dss , ? t j =25 4 ? 300 s, ?? 2 5 ??? notes: 1 pulse width limited by maximum junction temperature 2 vgs=10v , v dd =50v, r g =25 ?,starting t j =25 3 i sd 11 a,di/dt 3 00a/ s,vddbv dss , starting t j =25 4 pulse test pulse width 300s,duty cycle2 5 essential ly independent of operating temperature r
js 65 r 360 f u 20 160 8 a 5 / 8 electrical characteristics (curves) on - region characteristics transfer characteristics on - resistance variation vs. drain current and gate voltage body diode forward voltage variation vs. source current and temperature capacitance characteristics gate charge characteristics r
js 65 r 360 f u 20 160 8 a 6 / 8 electrical characteristics (curves) breakdown voltage variation vs. temperature on - resistance variation vs. temperature maximum drain current vs. case temperature maximu m safe operating area for js65r36 0f u transient thermal response curve for js65r360 f u r -75 -50 -25 0 25 50 75 100 125 150 0.8 0.9 1.0 1.1 1.2 notes 1. v g s =0v 2. i d =250a bv ds (normalized) t j [ ]
js 65 r 360 f u 20 160 8 a 7 / 8 ? package mechanical data to - 2 20mf - k2 u nit mm r
js 65 r 360 f u 20 160 8 a 8 / 8 ? 1. ????????? ?????? ???? 2. ????? ?? 3. ????? ?????? 4 . ??? note 1. jilin sino - micro electronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there i s any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino - microelectronics co . , ltd reserves the right to make changes in this specification sheet and is subject to change without prior notice. ?? ?????? ???? 99 ?? 132013 ? 86 - 432 - 6 4678411 86 - 432 - 6 4665812 ? www.hwdz.com.cn ? ??? 99 ?? 132013 86 - 432 - 6 4675588 6 4675688 6 4678411 : 86 - 432 - 6 4671533 contact jilin sino - microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86 - 432 - 6 4678411 fax 86 - 432 - 6 4665812 web site www. hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86 - 432 - 6 4675588 6 4675688 6 4678411 fax: 86 - 432 - 6 4671533 r
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